[전자] [解法(솔루션) ]반도체물성과소자 semicondutor phsics and deviceDonald A. Neame…
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작성일 20-10-28 18:22본문
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레포트 > 공학,기술계열
1.2
(a) fcc: 8 corner atoms × 1/8 = 1 atom
[解法(솔루션) ]semicondutor phsics and deviceDonald A. Neamen3판
(a) 4 Ga atoms per unit cell
Total of 2 atoms per unit cell
Density of Ge = − 4.44 1022 3 x cm
4 As atoms per unit cell, so that
−
[전자] [解法(솔루션) ]반도체물성과소자 semicondutor phsics and deviceDonald A. Neamen3판
1 atom per cell, so atom vol. = ( )F
Density of As = − 2.22 1022 3 x cm
4 enclosed atoms = 4 atoms
설명
Density = ⇒
8
(b)
[자료(data)범위] [解法(솔루션) ]semicondutor phsics and deviceDonald A. Neamen3판
5 65 10 8 3
반도체물성,소자,솔루션,semicondutor,Neamen,3판
다.
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8 Ge atoms per unit cell
565 10 8 3 b . x g
H G I
K J 1
Density = ⇒
(c) Diamond: 8 corner atoms × 1/8 = 1 atom
−
Total of 4 atoms per unit cell
6 face atoms × ½ = 3 atoms
Problem Solutions
(b) bcc: 8 corner atoms × 1/8 = 1 atom
1.3
1.1
[이용대상] [解法(솔루션) ]semicondutor phsics and deviceDonald A. Neamen3판
4
(a) Simple cubic lattice; a = 2r
b . x g
3
순서
4
[참고자료(data)] [解法(솔루션) ]semicondutor phsics and deviceDonald A. Neamen3판
Density of Ga = − 2.22 1022 3 x cm
6 face atoms × ½ = 3 atoms
[솔루션]semicondutor phsics and deviceDonald A. Neamen3판 [참고자료] [솔루션]semicondutor phsics and deviceDonald A. Neamen3판 [자료범위] [솔루션]semicondutor phsics and deviceDonald A. Neamen3판 [이용대상] [솔루션]semicondutor phsics and deviceDonald A. Neamen3판
1 enclosed atom = 1 atom
Unit cell vol = a = ( r) = r 3 3 3 2 8
Total of 8 atoms per unit cell
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